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?2010 fairchild semiconductor corporation fdb8896_f085 rev. a fdb8896_f085 n-channel powertrench ? mosfet 30v, 93a, 5.7m general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. applications ? dc/dc converters features ?r ds(on) = 5.7m , v gs = 10v, i d = 35a ?r ds(on) = 6.8m , v gs = 4.5v, i d = 35a ? high performance trench technology for extremely low r ds(on) ? low gate charge ? high power and current handling capability mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current 93 a continuous (t c = 25 o c, v gs = 10v) (note 1) continuous (t c = 25 o c, v gs = 4.5v) (note 1) 85 a continuous (t amb = 25 o c, v gs = 10v, with r ja = 43 o c/w) 19 a pulsed figure 4 a e as single pulse avalanche energy (note 2) 74 mj p d power dissipation 80 w derate above 25 o c0.53w/ o c t j , t stg operating and storage temperature -55 to 175 o c r jc thermal resistance junction to case to-263 1.88 o c/w r ja thermal resistance junction to ambient to-263 ( note 3) 62 o c/w r ja thermal resistance junction to ambient to-263, 1in 2 copper pad area 43 o c/w device marking device package reel size tape width quantity d g s to-263ab fdb series gate source drain (flange) fdb8896_f085 n-channel powertrench mosfet ? july 20 10 ? qualified to aec q101 ? rohs compliant s fdb8896 fdb8896_f085 to-263ab 330mm 24mm 800 units
electrical characteristics t c = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics (v gs = 10v) drain-source diode characteristics notes: 1: package current limitation is 80a. 2: starting t j = 25c, l = 36 h, i as = 64a, v dd = 27v, v gs = 10v. 3: pulse width = 100s. 4 symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 30 - - v i dss zero gate voltage drain current v ds = 24v - - 1 a v gs = 0v t c = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.2 - 2.5 v r ds(on) drain to source on resistance i d = 35a, v gs = 10v - 0.0049 0.0057 i d = 35a, v gs = 4.5v - 0.0059 0.0068 i d = 35a, v gs = 10v, t j = 175 o c - 0.0078 0.0094 c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 2525 - pf c oss output capacitance - 490 - pf c rss reverse transfer capacitance - 300 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 2.3 - q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 15v i d = 35a i g = 1.0ma -4867nc q g(5) total gate charge at 5v v gs = 0v to 5v - 25 36 nc q g(th) threshold gate charge v gs = 0v to 1v - 2.3 3.0 nc q gs gate to source gate charge - 8 - nc q gs2 gate charge threshold to plateau - 5.7 - nc q gd gate to drain ?miller? charge - 9.5 - nc t on tu r n - o n t i m e v dd = 15v, i d = 35a v gs = 4.5v, r gs = 6.2 - - 167 ns t d(on) turn-on delay time - 9 - ns t r rise time - 102 - ns t d(off) turn-off delay time - 58 - ns t f fall time - 44 - ns t off turn-off time - - 153 ns v sd source to drain diode voltage i sd = 35a - - 1.25 v i sd = 20a - - 1.0 v t rr reverse recovery time i sd = 35a, di sd /dt = 100a/ s- -27ns q rr reverse recovered charge i sd = 35a, di sd /dt = 100a/ s- -12nc fdb8896_f085 n-channel powertrench mosfet ? ?2010 fairchild semiconductor corporation fdb8896_f085 rev. a
typical characteristics t c = 25c unless otherwise noted figure 1. normalized power dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature figure 3. normalized maximum transient thermal impedance figure 4. peak current capability t c , case temperature ( o c) power dissipation multiplier 0 0 25 50 75 100 175 0.2 0.4 0.6 0.8 1.0 1.2 125 150 0 20 40 60 80 100 25 50 75 100 125 150 175 i d , drain current (a) t c , case temperature ( o c) current limited by package v gs = 4.5v v gs = 10v 0.1 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 2 t, rectangular pulse duration (s) z jc , normalized thermal impedance notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 0.5 0.2 0.1 0.05 0.01 0.02 duty cycle - descending order single pulse 100 1000 50 i dm , peak current (a) t, pulse width (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows: transconductance may limit current in this region v gs = 4.5v fdb8896_f085 n-channel powertrench mosfet ? ?2010 fairchild semiconductor corporation fdb8896_f085 rev. a
figure 5. forward bias safe operating area note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching capability figure 7. transfer characteristics f igure 8. saturation characteristics figure 9. drain to source on resistance vs gate voltage and drain current figure 10. normalized drain to source on resistance vs junction temperature typical characteristics t c = 25c unless otherwise noted 0.1 1 10 100 1000 110 60 v ds , drain to source voltage (v) i d , drain current (a) t j = max rated t c = 25 o c single pulse limited by r ds(on) area may be operation in this 10 s 1ms dc 100 s 10ms 1 10 100 0.01 0.1 1 10 100 500 i as , avalanche current (a) t av , time in avalanche (ms) starting t j = 25 o c starting t j = 150 o c t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] 0 40 80 120 160 1.5 2.0 2.5 3.0 3.5 4 i d , drain current (a) v gs , gate to source voltage (v) pulse duration = 80 s duty cycle = 0.5% max v dd = 15v t j = 175 o c t j = 25 o c t j = -55 o c 0 40 80 120 160 0 0.25 0.5 0.75 1.0 1.25 1.5 i d , drain current (a) v ds , drain to source voltage (v) pulse duration = 80 s duty cycle = 0.5% max t c = 25 o c v gs = 10v v gs = 4v v gs = 3v v gs = 5v 4 6 8 10 12 14 246810 i d = 1a v gs , gate to source voltage (v) i d = 35a r ds(on) , drain to source on resistance (m ) pulse duration = 80 s duty cycle = 0.5% max 0.6 0.8 1.0 1.2 1.4 1.6 -80 -40 0 40 80 120 160 200 normalized drain to source t j , junction temperature ( o c) on resistance v gs = 10v, i d = 35a pulse duration = 80 s duty cycle = 0.5% max fdb8896_f085 n-channel powertrench mosfet ? ?2010 fairchild semiconductor corporation fdb8896_f085 rev. a
figure 11. normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature figure 13. capacitance vs drain to source voltage figure 14. gate charge waveforms for constant gate current typical characteristics t c = 25c unless otherwise noted 0.4 0.6 0.8 1.0 1.2 -80 -40 0 40 80 120 160 200 v gs = v ds , i d = 250 a normalized gate t j , junction temperature ( o c) threshold voltage 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 200 t j , junction temperature ( o c) normalized drain to source i d = 250 a breakdown voltage 100 1000 0.1 1 10 30 5000 c, capacitance (pf) v ds , drain to source voltage (v) v gs = 0v, f = 1mhz c iss = c gs + c gd c oss ? c ds + c gd c rss = c gd 0 2 4 6 8 10 0 1020304050 v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15v i d = 35a i d = 16a waveforms in descending order: fdb8896_f085 n-channel powertrench mosfet ? ?2010 fairchild semiconductor corporation fdb8896_f085 rev. a
test circuits and waveforms figure 15. unclamped energy test circuit figure 16. unclamped energy waveforms figure 17. gate charge test circuit figure 18. gate charge waveforms figure 19. switching time test circuit figure 20. switching time waveforms t p v gs 0.01 l i as + - v ds v dd r g dut vary t p to obtain required peak i as 0v v dd v ds bv dss t p i as t av 0 v gs + - v ds v dd dut i g(ref) l v dd q g(th) v gs = 1v q gs2 q g(tot) v gs = 10v v ds v gs i g(ref) 0 0 q gs q gd q g(5) v gs = 5v v gs r l r gs dut + - v dd v ds v gs t on t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs 0 0 fdb8896_f085 n-channel powertrench mosfet ? ?2010 fairchild semiconductor corporation fdb8896_f085 rev. a
thermal resistance vs. mounting pad area the maximum rated junction temperature, t jm , and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, p dm , in an application. therefore the application?s ambient temperature, t a ( o c), and thermal resistance r ja ( o c/w) must be reviewed to ensure that t jm is never exceeded. equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part. in using surface mount devices such as the to-263 package, the environment in which it is applied will have a significant influence on the part?s current and maximum power dissipation ratings. precise determination of p dm is complex and influenced by many factors: 1. mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. the number of copper layers and the thickness of the board. 3. the use of external heat sinks. 4. the use of thermal vias. 5. air flow and board orientation. 6. for non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. fairchild provides thermal information to assist the designer?s preliminary application evaluation. figure 21 defines the r ja for the device as a function of the top copper (component side) area. this is for a horizontally positioned fr-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. this graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. pulse applications can be evaluated using the fairchild device spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve. thermal resistances corresponding to other copper areas can be obtained from figure 21 or by calculation using equation 2 or 3. equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeters square. the area, in square inches or square centimeters is the top copper area including the gate and source pads. (eq. 1) p dm t jm t a ? () r ja ----------------------------- = area in inches squared (eq. 2) r ja 26.51 19.84 0.262 area + () ------------------------------------- + = (eq. 3) r ja 26.51 128 1.69 area + () ---------------------------------- + = area in centimeters squared figure 21. thermal resistance vs mounting pad area 20 40 60 80 110 0.1 r ja = 26.51+ 19.84/(0.262+area) eq.2 r ja ( o c/w) area, top copper area in 2 (cm 2 ) (0.645) (6.45) (64.5) r ja = 26.51+ 128/(1.69+area) eq.3 fdb8896_f085 n-channel powertrench mosfet ? ?2010 fairchild semiconductor corporation fdb8896_f085 rev. a
pspice electrical model .subckt fdb8896 2 1 3 ; rev december 2003 ca 12 8 2.3e-9 cb 15 14 2.3e-9 cin 6 8 2.3e-9 dbody 7 5 dbodymod dbreak 5 11 dbreakmod dplcap 10 5 dplcapmod ebreak 11 7 17 18 33 eds 14 8 5 8 1 egs 13 8 6 8 1 esg 6 10 6 8 1 evthres 6 21 19 8 1 evtemp 20 6 18 22 1 it 8 17 1 lgate 1 9 5.5e-9 ldrain 2 5 1.0e-9 lsource 3 7 2.7e-9 rlgate 1 9 55 rldrain 2 5 10 rlsource 3 7 27 mmed 16 6 8 8 mmedmod mstro 16 6 8 8 mstromod mweak 16 21 8 8 mweakmod rbreak 17 18 rbreakmod 1 rdrain 50 16 rdrainmod 2.1e-3 rgate 9 20 2.3 rslc1 5 51 rslcmod 1e-6 rslc2 5 50 1e3 rsource 8 7 rsourcemod 2e-3 rvthres 22 8 rvthresmod 1 rvtemp 18 19 rvtempmod 1 s1a 6 12 13 8 s1amod s1b 13 12 13 8 s1bmod s2a 6 15 14 13 s2amod s2b 13 15 14 13 s2bmod vbat 22 19 dc 1 eslc 51 50 value={(v(5,51)/abs(v(5,51)))*(pwr(v(5,51)/(1e-6*500),10))} .model dbodymod d (is=4e-12 ikf=10 n=1.01 rs=2.6e-3 trs1=8e-4 trs2=2e-7 + cjo=8.8e-10 m=0.57 tt=1e-16 xti=2.2) .model dbreakmod d (rs=8e-2 trs1=1e-3 trs2=-8.9e-6) .model dplcapmod d (cjo=9.4e-10 is=1e-30 n=10 m=0.4) .model mmedmod nmos (vto=1.98 kp=10 is=1e-30 n=10 tox=1 l=1u w=1u rg=2.3 t_abs=25) .model mstromod nmos (vto=2.4 kp=350 is=1e-30 n=10 tox=1 l=1u w=1u t_abs=25) .model mweakmod nmos (vto=1.68 kp=0.05 is=1e-30 n=10 tox=1 l=1u w=1u rg=23 rs=0.1 t_abs=25) .model rbreakmod res (tc1=8.3e-4 tc2=-4e-7) .model rdrainmod res (tc1=1.2e-3 tc2=8e-6) .model rslcmod res (tc1=9e-4 tc2=1e-6) .model rsourcemod res (tc1=7.5e-3 tc2=1e-6) .model rvthresmod res (tc1=-2.4e-3 tc2=-8.8e-6) .model rvtempmod res (tc1=-2.6e-3 tc2=2e-7) .model s1amod vswitch (ron=1e-5 roff=0.1 von=-4 voff=-3) .model s1bmod vswitch (ron=1e-5 roff=0.1 von=-3 voff=-4) .model s2amod vswitch (ron=1e-5 roff=0.1 von=-2 voff=-0.5) .model s2bmod vswitch (ron=1e-5 roff=0.1 von=-0.5 voff=-2) .ends note: for further discussion of the pspice model, consult a new pspice sub-circuit for the power mosfet featuring global temperature options ; ieee power electronics specialist conference records, 1991, written by william j. hepp and c. frank wheatley. 18 22 + - 6 8 + - 5 51 + - 19 8 + - 17 18 6 8 + - 5 8 + - rbreak rvtemp vbat rvthres it 17 18 19 22 12 13 15 s1a s1b s2a s2b ca cb egs eds 14 8 13 8 14 13 mweak ebreak dbody rsource source 11 7 3 lsource rlsource cin rdrain evthres 16 21 8 mmed mstro drain 2 ldrain rldrain dbreak dplcap eslc rslc1 10 5 51 50 rslc2 1 gate rgate evtemp 9 esg lgate rlgate 20 + - + - + - 6 fdb8896_f085 n-channel powertrench mosfet ? ?2010 fairchild semiconductor corporation fdb8896_f085 rev. a
saber electrical model rev december 2003 template fdb8896 n2,n1,n3 =m_temp electrical n2,n1,n3 number m_temp=25 { var i iscl dp..model dbodymod = (isl=4e-12,ikf=10,nl=1.01,rs=2.6e-3,trs1=8e-4,trs2=2e-7,cjo=8.8e-10,m=0.57,tt=1e-16,xti=2.2) dp..model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=9.4e-10,isl=10e-30,nl=10,m=0.4) m..model mmedmod = (type=_n,vto=1.98,kp=10,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.4,kp=350,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.68,kp=0.05,is=1e-30, tox=1,rs=0.1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3) sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3,voff=-4) sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-2,voff=-0.5) sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.5,voff=-2) c.ca n12 n8 = 2.3e-9 c.cb n15 n14 = 2.3e-9 c.cin n6 n8 = 2.3e-9 dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmod spe.ebreak n11 n7 n17 n18 = 33 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 i.it n8 n17 = 1 l.lgate n1 n9 = 5.5e-9 l.ldrain n2 n5 = 1.0e-9 l.lsource n3 n7 = 2.7e-9 res.rlgate n1 n9 = 55 res.rldrain n2 n5 = 10 res.rlsource n3 n7 = 27 m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u, temp=m_temp m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u, temp=m_temp m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u, temp=m_temp res.rbreak n17 n18 = 1, tc1=8.3e-4,tc2=-4e-7 res.rdrain n50 n16 = 2.1e-3, tc1=1.2e-3,tc2=8e-6 res.rgate n9 n20 = 2.3 res.rslc1 n5 n51 = 1e-6, tc1=9e-4,tc2=1e-6 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 2e-3, tc1=7.5e-3,tc2=1e-6 res.rvthres n22 n8 = 1, tc1=-2.4e-3,tc2=-8.8e-6 res.rvtemp n18 n19 = 1, tc1=-2.6e-3,tc2=2e-7 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/500))** 10)) } } 18 22 + - 6 8 + - 19 8 + - 17 18 6 8 + - 5 8 + - rbreak rvtemp vbat rvthres it 17 18 19 22 12 13 15 s1a s1b s2a s2b ca cb egs eds 14 8 13 8 14 13 mweak ebreak dbody rsource source 11 7 3 lsource rlsource cin rdrain evthres 16 21 8 mmed mstro drain 2 ldrain rldrain dbreak dplcap iscl rslc1 10 5 51 50 rslc2 1 gate rgate evtemp 9 esg lgate rlgate 20 + - + - + - 6 fdb8896_f085 n-channel powertrench mosfet ? ?2010 fairchild semiconductor corporation fdb8896_f085 rev. a
pspice thermal model rev 23 december 2003 fdb8896t ctherm1 th 6 9e-4 ctherm2 6 5 1e-3 ctherm3 5 4 2e-3 ctherm4 4 3 3e-3 ctherm5 3 2 7e-3 ctherm6 2 tl 8e-2 rtherm1 th 6 3.0e-2 rtherm2 6 5 1.0e-1 rtherm3 5 4 1.8e-1 rtherm4 4 3 2.8e-1 rtherm5 3 2 4.5e-1 rtherm6 2 tl 4.6e-1 saber thermal model saber thermal model fdb8896t template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 =9e-4 ctherm.ctherm2 6 5 =1e-3 ctherm.ctherm3 5 4 =2e-3 ctherm.ctherm4 4 3 =3e-3 ctherm.ctherm5 3 2 =7e-3 ctherm.ctherm6 2 tl =8e-2 rtherm.rtherm1 th 6 =3.0e-2 rtherm.rtherm2 6 5 =1.0e-1 rtherm.rtherm3 5 4 =1.8e-1 rtherm.rtherm4 4 3 =2.8e-1 rtherm.rtherm5 3 2 =4.5e-1 rtherm.rtherm6 2 tl =4.6e-1 } rtherm4 rtherm6 rtherm5 rtherm3 rtherm2 rtherm1 ctherm4 ctherm6 ctherm5 ctherm3 ctherm2 ctherm1 tl 2 3 4 5 6 th junction case fdb8896_f085 n-channel powertrench mosfet ? ?2010 fairchild semiconductor corporation fdb8896_f085 rev. a
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